MMBT5401BD Transistor Datasheet

PNP BJT | Huixin

PNPSOT-26General Purpose
VCEO
150V
Ic Max
200mA
Pd Max
300mW
Gain
-
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Quick Reference

The MMBT5401BD is a PNP bipolar transistor in a SOT-26 package, designed for general purpose applications. It supports a breakdown voltage of 150V and continuous collector current of 200mA. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHuixinOriginal Manufacturer
PackageSOT-26Physical mounting form factor
VCEO150VBreakdown voltage
IC Max200mACollector current
Pd Max300mWPower dissipation
Gain-DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo300MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
No compatible alternatives found.
View all SOT-26 PNP Transistors ›