MMBT5401D Transistor Datasheet

PNP BJT | BORN

PNPSOT-23-6LGeneral Purpose
VCEO
150V
Ic Max
200mA
Pd Max
200mW
Gain
300@10mA,5V

Quick Reference

The MMBT5401D is a PNP bipolar transistor in a SOT-23-6L package, designed for general purpose applications. It supports a breakdown voltage of 150V and continuous collector current of 200mA. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerBORNOriginal Manufacturer
PackageSOT-23-6LPhysical mounting form factor
VCEO150VBreakdown voltage
IC Max200mACollector current
Pd Max200mWPower dissipation
Gain300@10mA,5VDC current gain
Frequency100MHzTransition frequency
VCE(sat)500mV@50mA,5mASaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
No compatible alternatives found.
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