MMBT5550LT1G Transistor Datasheet

NPN BJT | onsemi

NPNSOT-23General Purpose
VCEO
140V
Ic Max
600mA
Pd Max
225mW
Gain
60
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Quick Reference

The MMBT5550LT1G is a NPN bipolar transistor in a SOT-23 package, designed for general purpose applications. It supports a breakdown voltage of 140V and continuous collector current of 600mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting form factor
VCEO140VBreakdown voltage
IC Max600mACollector current
Pd Max225mWPower dissipation
Gain60DC current gain
Frequency-Transition frequency
VCE(sat)250mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
FMMT415TD NPN SOT-23 100V 500mA 500mW
MMBT5551 NPN SOT-23 160V 600mA 250mW
MMBT5551 NPN SOT-23 160V 600mA 250mW
ZXTN25100DFHTA NPN SOT-23 100V 2.5A 1.25W
NSS1C201LT1G NPN SOT-23 100V 2A 710mW
FMMT493TA NPN SOT-23 100V 1A 500mW
FMMT493 NPN SOT-23 100V 1A 500mW
FMMT495TA NPN SOT-23 150V 1A 500mW
FMMT624TA NPN SOT-23 125V 1A 625mW
View all SOT-23 NPN Transistors ›