MMBT5551-6AF Transistor Datasheet

NPN BJT | FOSAN

NPNSOT-23General Purpose
VCEO
150V
Ic Max
600mA
Pd Max
300mW
Gain
300
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Quick Reference

The MMBT5551-6AF is a NPN bipolar transistor in a SOT-23 package, designed for general purpose applications. It supports a breakdown voltage of 150V and continuous collector current of 600mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerFOSANOriginal Manufacturer
PackageSOT-23Physical mounting form factor
VCEO150VBreakdown voltage
IC Max600mACollector current
Pd Max300mWPower dissipation
Gain300DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo100MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MMBT5551 NPN SOT-23 160V 600mA 250mW
MMBT5551 NPN SOT-23 160V 600mA 250mW
FMMT495TA NPN SOT-23 150V 1A 500mW
FMMT624TA NPN SOT-23 125V 1A 625mW
MMBT5551-TP NPN SOT-23 160V 600mA 300mW
MMBT5551-E NPN SOT-23 160V 600mA 300mW
MMBT5551 NPN SOT-23 160V 600mA 250mW
MMBT5551 NPN SOT-23 160V 600mA 250mW
MMBT5551(RANGE:200-300) NPN SOT-23 160V 600mA 300mW
View all SOT-23 NPN Transistors ›