MMBT5551DW Transistor Datasheet

NPN BJT | Shikues

NPNSOT-363General Purpose
VCEO
160V
Ic Max
600mA
Pd Max
500mW
Gain
300
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Quick Reference

The MMBT5551DW is a NPN bipolar transistor in a SOT-363 package, designed for general purpose applications. It supports a breakdown voltage of 160V and continuous collector current of 600mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerShikuesOriginal Manufacturer
PackageSOT-363Physical mounting form factor
VCEO160VBreakdown voltage
IC Max600mACollector current
Pd Max500mWPower dissipation
Gain300DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo110MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MMDT5551(RANGE:100-300) NPN SOT-363 160V 200mA 200mW
MMDT5551 NPN SOT-363 160V 200mA 200mW
MMDT5551 NPN SOT-363 160V 200mA 200mW
MMDT5551DW NPN SOT-363 160V 200mA 200mW
JTDMMDT5551 NPN SOT-363 160V 200mA 200mW
MMDT5551-JSM NPN SOT-363 160V 200mA 200mW
MMDT5551 NPN SOT-363 160V 200mA 200mW
MMDT5551 NPN SOT-363 160V 200mA 200mW
MMDT5551 NPN SOT-363 160V 200mA 200mW
View all SOT-363 NPN Transistors ›