MMBT5551LT1G-CN Transistor Datasheet

NPN BJT | ChipNobo

NPNSOT-23General Purpose
VCEO
160V
Ic Max
600mA
Pd Max
300mW
Gain
300
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Quick Reference

The MMBT5551LT1G-CN is a NPN bipolar transistor in a SOT-23 package, designed for general purpose applications. It supports a breakdown voltage of 160V and continuous collector current of 600mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerChipNoboOriginal Manufacturer
PackageSOT-23Physical mounting form factor
VCEO160VBreakdown voltage
IC Max600mACollector current
Pd Max300mWPower dissipation
Gain300DC current gain
Frequency300MHzTransition frequency
VCE(sat)200mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MMBTA42 NPN SOT-23 200V 500mA 350mW
MMBT5551 NPN SOT-23 160V 600mA 250mW
MMBT5551 NPN SOT-23 160V 600mA 250mW
FMMT495TA NPN SOT-23 150V 1A 500mW
FMMT624TA NPN SOT-23 125V 1A 625mW
MMBT5551-TP NPN SOT-23 160V 600mA 300mW
MMBT5551-E NPN SOT-23 160V 600mA 300mW
MMBT5551 NPN SOT-23 160V 600mA 250mW
MMBT5551 NPN SOT-23 160V 600mA 250mW
View all SOT-23 NPN Transistors ›