MMBT5551M3T5G Transistor Datasheet

NPN BJT | onsemi

NPNSOT-723General Purpose
VCEO
160V
Ic Max
60mA
Pd Max
640mW
Gain
80
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Quick Reference

The MMBT5551M3T5G is a NPN bipolar transistor in a SOT-723 package, designed for general purpose applications. It supports a breakdown voltage of 160V and continuous collector current of 60mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-723Physical mounting form factor
VCEO160VBreakdown voltage
IC Max60mACollector current
Pd Max640mWPower dissipation
Gain80DC current gain
Frequency-Transition frequency
VCE(sat)150mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
No compatible alternatives found.
View all SOT-723 NPN Transistors ›