MMBT6427LT1G Transistor Datasheet

NPN BJT | onsemi

NPNSOT-23General Purpose
VCEO
40V
Ic Max
500mA
Pd Max
225mW
Gain
20000
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Quick Reference

The MMBT6427LT1G is a NPN bipolar transistor in a SOT-23 package, designed for general purpose applications. It supports a breakdown voltage of 40V and continuous collector current of 500mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting form factor
VCEO40VBreakdown voltage
IC Max500mACollector current
Pd Max225mWPower dissipation
Gain20000DC current gain
Frequency-Transition frequency
VCE(sat)1.5VSaturation voltage
Vebo-Emitter-Base voltage
Temp-55℃~+150℃@(Tj)Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
FMMT491ATA NPN SOT-23 40V 1A 500mW
BC817-16LT1G NPN SOT-23 45V 500mA 225mW
BC817-40LT1G NPN SOT-23 45V 500mA 225mW
MMBT3904-7-F NPN SOT-23 40V 200mA 310mW
S9014 NPN SOT-23 45V 100mA 200mW
ZXTN2040FTA NPN SOT-23 40V 1A 310mW
BC817-40Q-7-F NPN SOT-23 45V 500mA 310mW
BC847B-7-F NPN SOT-23 45V 100mA 300mW
MMBT3904 NPN SOT-23 40V 200mA 250mW
MMBT4401 NPN SOT-23 40V 600mA 350mW
View all SOT-23 NPN Transistors ›