MMBT6517BEC Transistor Datasheet

NPN BJT | EIC

NPNTO-236General Purpose
VCEO
350V
Ic Max
500mA
Pd Max
200mW
Gain
200
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Quick Reference

The MMBT6517BEC is a NPN bipolar transistor in a TO-236 package, designed for general purpose applications. It supports a breakdown voltage of 350V and continuous collector current of 500mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerEICOriginal Manufacturer
PackageTO-236Physical mounting form factor
VCEO350VBreakdown voltage
IC Max500mACollector current
Pd Max200mWPower dissipation
Gain200DC current gain
Frequency200MHzTransition frequency
VCE(sat)1VSaturation voltage
Vebo6VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
No compatible alternatives found.
View all TO-236 NPN Transistors ›