MMBT8050D Transistor Datasheet

PNP BJT | PJSEMI

PNPSOT-23General Purpose
VCEO
25V
Ic Max
600mA
Pd Max
350mW
Gain
400
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Quick Reference

The MMBT8050D is a PNP bipolar transistor in a SOT-23 package, designed for general purpose applications. It supports a breakdown voltage of 25V and continuous collector current of 600mA. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerPJSEMIOriginal Manufacturer
PackageSOT-23Physical mounting form factor
VCEO25VBreakdown voltage
IC Max600mACollector current
Pd Max350mWPower dissipation
Gain400DC current gain
Frequency100MHzTransition frequency
VCE(sat)500mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
FMMTL718TA PNP SOT-23 20V 1A 500mW
SS8550 PNP SOT-23 25V 1.5A 350mW
2SA1585(RANGE:180-390) PNP SOT-23 20V 2A 350mW
S9012 PNP SOT-23 25V 500mA 300mW
S8550 PNP SOT-23 25V 500mA 300mW
S9012 PNP SOT-23 25V 500mA 300mW
S9012 PNP SOT-23 25V 500mA 300mW
SS8550 PNP SOT-23 25V 1.5A 350mW
DSS5320T-7 PNP SOT-23 20V 2A 600mW
View all SOT-23 PNP Transistors ›