MMBT9013G Transistor Datasheet

NPN BJT | ST(Semtech)

NPNTO-236General Purpose
VCEO
30V
Ic Max
500mA
Pd Max
200mW
Gain
100
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Quick Reference

The MMBT9013G is a NPN bipolar transistor in a TO-236 package, designed for general purpose applications. It supports a breakdown voltage of 30V and continuous collector current of 500mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerST(Semtech)Original Manufacturer
PackageTO-236Physical mounting form factor
VCEO30VBreakdown voltage
IC Max500mACollector current
Pd Max200mWPower dissipation
Gain100DC current gain
Frequency100MHzTransition frequency
VCE(sat)600mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MMBT8050C NPN TO-236 25V 600mA 350mW
View all TO-236 NPN Transistors ›