MMBTA63LT1G Transistor Datasheet

PNP BJT | onsemi

PNPSOT-23General Purpose
VCEO
-
Ic Max
500mA
Pd Max
225mW
Gain
5000
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Quick Reference

The MMBTA63LT1G is a PNP bipolar transistor in a SOT-23 package, designed for general purpose applications. It supports a breakdown voltage of - and continuous collector current of 500mA. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting form factor
VCEO-Breakdown voltage
IC Max500mACollector current
Pd Max225mWPower dissipation
Gain5000DC current gain
Frequency125MHzTransition frequency
VCE(sat)1.5VSaturation voltage
Vebo-Emitter-Base voltage
Temp-55℃~+150℃@(Tj)Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
FMMTA92QTA PNP SOT-23 - 300V 200mA
BC807-40-7-F PNP SOT-23 - 45V 500mA
BC858BLT3G PNP SOT-23 - 30V 100mA
S9012 PNP SOT-23 25V 500mA 300mW
MMBTA92 PNP SOT-23 300V 500mA 300mW
MMBT4403 PNP SOT-23 40V 600mA 300mW
BC807-16 PNP SOT-23 45V 500mA 300mW
MMBT5401LT1G-CN PNP SOT-23 - 150V 600mA
BCW68H PNP SOT-23 - 60V 800mA
S8550 PNP SOT-23 25V 500mA 300mW
View all SOT-23 PNP Transistors ›