MMBTA64LT1G Transistor Datasheet

PNP BJT | onsemi

PNPSOT-23General Purpose
VCEO
30V
Ic Max
500mA
Pd Max
225mW
Gain
20000@5V,100mA
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Quick Reference

The MMBTA64LT1G is a PNP bipolar transistor in a SOT-23 package, designed for general purpose applications. It supports a breakdown voltage of 30V and continuous collector current of 500mA. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting form factor
VCEO30VBreakdown voltage
IC Max500mACollector current
Pd Max225mWPower dissipation
Gain20000@5V,100mADC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo125MHzEmitter-Base voltage
Temp-55℃~+150℃@(Tj)Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
SS8550 PNP SOT-23 25V 1.5A 350mW
S9012 PNP SOT-23 25V 500mA 300mW
S8550 PNP SOT-23 25V 500mA 300mW
S9012 PNP SOT-23 25V 500mA 300mW
S9012 PNP SOT-23 25V 500mA 300mW
SS8550 PNP SOT-23 25V 1.5A 350mW
ZXTP23015CFHTA PNP SOT-23 25V 6A 1.25W
SS8550(RANGE:300-400) PNP SOT-23 25V 1.5A 300mW
View all SOT-23 PNP Transistors ›