MMDT2227-JSM Transistor Datasheet

NPN+PNP BJT | JSMSEMI

NPN+PNPSOT-363-6LGeneral Purpose
VCEO
60V
Ic Max
600mA
Pd Max
200mW
Gain
300
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Quick Reference

The MMDT2227-JSM is a NPN+PNP bipolar transistor in a SOT-363-6L package, designed for general purpose applications. It supports a breakdown voltage of 60V and continuous collector current of 600mA. This component is widely used in NPN+PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSMSEMIOriginal Manufacturer
PackageSOT-363-6LPhysical mounting form factor
VCEO60VBreakdown voltage
IC Max600mACollector current
Pd Max200mWPower dissipation
Gain300DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo300MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
No compatible alternatives found.
View all SOT-363-6L NPN+PNP Transistors ›