MMDT4146-7-F-HXY Transistor Datasheet

NPN+PNP BJT | HXY MOSFET

NPN+PNPSOT-363General Purpose
VCEO
40V
Ic Max
200mA
Pd Max
200mW
Gain
300
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Quick Reference

The MMDT4146-7-F-HXY is a NPN+PNP bipolar transistor in a SOT-363 package, designed for general purpose applications. It supports a breakdown voltage of 40V and continuous collector current of 200mA. This component is widely used in NPN+PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-363Physical mounting form factor
VCEO40VBreakdown voltage
IC Max200mACollector current
Pd Max200mWPower dissipation
Gain300DC current gain
Frequency300MHzTransition frequency
VCE(sat)-Saturation voltage
Vebo5VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MMDT3946 NPN+PNP SOT-363 40V 200mA 200mW
PMBT3946YPN-HXY NPN+PNP SOT-363 40V 200mA 200mW
MBT3946DW1T1G-HXY NPN+PNP SOT-363 40V 200mA 200mW
MMDT3946 NPN+PNP SOT-363 40V 200mA 200mW
MMDT3946 NPN+PNP SOT-363 40V 200mA 200mW
HUMZ1NTR NPN+PNP SOT-363 50V 150mA 150mW
MMDT4413 NPN+PNP SOT-363 40V 600mA 200mW
BC847PN NPN+PNP SOT-363 45V 100mA 200mW
UMF28NTR NPN+PNP SOT-363 50V 150mA 150mW
MMDT3946DW NPN+PNP SOT-363 40V 200mA 200mW
View all SOT-363 NPN+PNP Transistors ›