MMDT5401DW Transistor Datasheet

PNP BJT | CBI

PNPSOT-363General Purpose
VCEO
150V
Ic Max
600mA
Pd Max
300mW
Gain
300

Quick Reference

The MMDT5401DW is a PNP bipolar transistor in a SOT-363 package, designed for general purpose applications. It supports a breakdown voltage of 150V and continuous collector current of 600mA. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerCBIOriginal Manufacturer
PackageSOT-363Physical mounting form factor
VCEO150VBreakdown voltage
IC Max600mACollector current
Pd Max300mWPower dissipation
Gain300DC current gain
Frequency100MHzTransition frequency
VCE(sat)500mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MMDT5401 PNP SOT-363 150V 200mA 200mW
TPMMDT5401 PNP SOT-363 150V 200mA 200mW
MMDT5401 PNP SOT-363 150V 200mA 200mW
MMDT5401 PNP SOT-363 150V 200mA 200mW
MMDT5401 PNP SOT-363 150V 200mA 200mW
MMDT5401(RANGE:100-300) PNP SOT-363 150V 200mA 200mW
View all SOT-363 PNP Transistors โ€บ