MMST5551-7-F Transistor Datasheet

NPN BJT | DIODES

NPNSOT-323General Purpose
VCEO
160V
Ic Max
200mA
Pd Max
200mW
Gain
250
📄 View PDF Datasheet🛒 Buy from LCSC

Quick Reference

The MMST5551-7-F is a NPN bipolar transistor in a SOT-323 package, designed for general purpose applications. It supports a breakdown voltage of 160V and continuous collector current of 200mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-323Physical mounting form factor
VCEO160VBreakdown voltage
IC Max200mACollector current
Pd Max200mWPower dissipation
Gain250DC current gain
Frequency300MHzTransition frequency
VCE(sat)200mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
2SC4102T106R NPN SOT-323 120V 50mA 200mW
MMST5551Q-7-F NPN SOT-323 160V 200mA 200mW
MMST5551-JSM NPN SOT-323 160V 600mA 200mW
MMST5551 NPN SOT-323 160V 600mA 200mW
MMSTA06-7-F-HXY NPN SOT-323 160V 600nA 200mW
BC816-25WX-HXY NPN SOT-323 160V 600mA 200mW
MMBTA06WT1G-HXY NPN SOT-323 160V 600mA 200mW
PMST5551-HXY NPN SOT-323 160V 600nA 200mW
MMST5551(RANGE:100-300) NPN SOT-323 160V 600mA 200mW
View all SOT-323 NPN Transistors ›