NJL3281DG Transistor Datasheet

NPN BJT | onsemi

NPNTO-264-5High Power
VCEO
260V
Ic Max
15A
Pd Max
200W
Gain
75
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Quick Reference

The NJL3281DG is a NPN bipolar transistor in a TO-264-5 package, designed for high power applications. It supports a breakdown voltage of 260V and continuous collector current of 15A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-264-5Physical mounting form factor
VCEO260VBreakdown voltage
IC Max15ACollector current
Pd Max200WPower dissipation
Gain75DC current gain
Frequency30MHzTransition frequency
VCE(sat)3VSaturation voltage
Vebo-Emitter-Base voltage
Temp-65℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
No compatible alternatives found.
View all TO-264-5 NPN Transistors ›