NJVMJD31T4G Transistor Datasheet

NPN BJT | onsemi

NPNDPAKHigh Power
VCEO
40V
Ic Max
3A
Pd Max
15W
Gain
25
📄 View PDF Datasheet🛒 Buy from LCSC

Quick Reference

The NJVMJD31T4G is a NPN bipolar transistor in a DPAK package, designed for high power applications. It supports a breakdown voltage of 40V and continuous collector current of 3A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageDPAKPhysical mounting form factor
VCEO40VBreakdown voltage
IC Max3ACollector current
Pd Max15WPower dissipation
Gain25DC current gain
Frequency3MHzTransition frequency
VCE(sat)1.2VSaturation voltage
Vebo5VEmitter-Base voltage
Temp-65℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
NJVNJD2873T4G NPN DPAK 50V 2A 15W
MJD2873-QJ NPN DPAK 50V 2A 1.6W
View all DPAK NPN Transistors ›