NJW0281G Transistor Datasheet

NPN BJT | onsemi

NPNTO-3PHigh Power
VCEO
250V
Ic Max
15A
Pd Max
150W
Gain
75
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Quick Reference

The NJW0281G is a NPN bipolar transistor in a TO-3P package, designed for high power applications. It supports a breakdown voltage of 250V and continuous collector current of 15A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-3PPhysical mounting form factor
VCEO250VBreakdown voltage
IC Max15ACollector current
Pd Max150WPower dissipation
Gain75DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo30MHzEmitter-Base voltage
Temp-65℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
NJW21194G NPN TO-3P 250V 16A 200W
View all TO-3P NPN Transistors ›