NSV1C301ET4G Transistor Datasheet

NPN BJT | onsemi

NPNDPAK-3High Power
VCEO
100V
Ic Max
3A
Pd Max
2.1W
Gain
200
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Quick Reference

The NSV1C301ET4G is a NPN bipolar transistor in a DPAK-3 package, designed for high power applications. It supports a breakdown voltage of 100V and continuous collector current of 3A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageDPAK-3Physical mounting form factor
VCEO100VBreakdown voltage
IC Max3ACollector current
Pd Max2.1WPower dissipation
Gain200DC current gain
Frequency120MHzTransition frequency
VCE(sat)250mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-65℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJD31C-13 NPN DPAK-3 100V 3A 15W
View all DPAK-3 NPN Transistors ›