NSV60200LT1G Transistor Datasheet

PNP BJT | onsemi

PNPSOT-23General Purpose
VCEO
60V
Ic Max
2A
Pd Max
540mW
Gain
150
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Quick Reference

The NSV60200LT1G is a PNP bipolar transistor in a SOT-23 package, designed for general purpose applications. It supports a breakdown voltage of 60V and continuous collector current of 2A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting form factor
VCEO60VBreakdown voltage
IC Max2ACollector current
Pd Max540mWPower dissipation
Gain150DC current gain
Frequency100MHzTransition frequency
VCE(sat)95mVSaturation voltage
Vebo7VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MMBT2907A-7-F PNP SOT-23 60V 600mA 350mW
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ZXTP2025FTA PNP SOT-23 50V 5A 1.2W
2SA812 PNP SOT-23 50V 100mA 200mW
LBC856BLT1G PNP SOT-23 65V 100mA 225mW
LBC807-40LT1G PNP SOT-23 45V 500mA 225mW
MMBT2907A PNP SOT-23 60V 600mA 300mW
MMBT2907A PNP SOT-23 60V 600mA 300mW
FMMT591TA PNP SOT-23 60V 1A 500mW
View all SOT-23 PNP Transistors ›