NSVBC847BTT1G-HXY Transistor Datasheet

- BJT | HXY MOSFET

-SOT-523General Purpose
VCEO
45V
Ic Max
100mA
Pd Max
150mW
Gain
450
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Quick Reference

The NSVBC847BTT1G-HXY is a - bipolar transistor in a SOT-523 package, designed for general purpose applications. It supports a breakdown voltage of 45V and continuous collector current of 100mA. This component is widely used in - switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-523Physical mounting form factor
VCEO45VBreakdown voltage
IC Max100mACollector current
Pd Max150mWPower dissipation
Gain450DC current gain
Frequency100MHzTransition frequency
VCE(sat)-Saturation voltage
Vebo6VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
BC847BT-7-F-HXY - SOT-523 45V 100mA 150mW
NSVBC857BTT1G-HXY - SOT-523 45V 100mA 150mW
BC857BT-7-F-HXY - SOT-523 45V 100mA 150mW
View all SOT-523 - Transistors ›