NSVMMBT5401LT3G Transistor Datasheet

PNP BJT | onsemi

PNPSOT-23General Purpose
VCEO
150V
Ic Max
500mA
Pd Max
300mW
Gain
50
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Quick Reference

The NSVMMBT5401LT3G is a PNP bipolar transistor in a SOT-23 package, designed for general purpose applications. It supports a breakdown voltage of 150V and continuous collector current of 500mA. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting form factor
VCEO150VBreakdown voltage
IC Max500mACollector current
Pd Max300mWPower dissipation
Gain50DC current gain
Frequency100MHzTransition frequency
VCE(sat)500mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MMBT5401 PNP SOT-23 150V 500mA 225mW
MMBT5401 PNP SOT-23 150V 500mA 225mW
MMBT5401-7-F PNP SOT-23 150V 600mA 310mW
MMBT5401(RANGE:200-300) PNP SOT-23 150V 600mA 300mW
MMBT5401-TP PNP SOT-23 150V 600mA 300mW
MMBT5401LT1G PNP SOT-23 150V 500mA 300mW
MMBT5401 PNP SOT-23 150V 500mA 225mW
MMBT5401 PNP SOT-23 150V 500mA 225mW
MMBT5401S PNP SOT-23 150V 600mA 300mW
View all SOT-23 PNP Transistors ›