NTE297-HXY Transistor Datasheet

NPN BJT | HXY MOSFET

NPNTO-92General Purpose
VCEO
160V
Ic Max
600mA
Pd Max
625mW
Gain
200
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Quick Reference

The NTE297-HXY is a NPN bipolar transistor in a TO-92 package, designed for general purpose applications. It supports a breakdown voltage of 160V and continuous collector current of 600mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-92Physical mounting form factor
VCEO160VBreakdown voltage
IC Max600mACollector current
Pd Max625mWPower dissipation
Gain200DC current gain
Frequency300MHzTransition frequency
VCE(sat)200mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
ZTX455 NPN TO-92 140V 1A 1W
ZTX694B NPN TO-92 120V 500mA 1.5W
KSP8099TF-HXY NPN TO-92 160V 600mA 625mW
2N5551 NPN TO-92 160V 600mA 625mW
2N5551 NPN TO-92 160V 600mA 625mW
2SC2240 NPN TO-92 120V 100mA 300mW
2N5551 NPN TO-92 160V 600mA 625mW
2SC2383-Y NPN TO-92LM 160V 1A 900mW
2SD1857L-Q-T92-B NPN TO-92 120V 2A 625mW
ZTX605 NPN TO-92 120V 1A 1W
View all TO-92 NPN Transistors ›