OSB688 Transistor Datasheet

NPN+PNP BJT | OSEN

NPN+PNPTO-3PNTHigh Power
VCEO
-
Ic Max
120V
Pd Max
10A
Gain
-
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Quick Reference

The OSB688 is a NPN+PNP bipolar transistor in a TO-3PNT package, designed for high power applications. It supports a breakdown voltage of - and continuous collector current of 120V. This component is widely used in NPN+PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerOSENOriginal Manufacturer
PackageTO-3PNTPhysical mounting form factor
VCEO-Breakdown voltage
IC Max120VCollector current
Pd Max10APower dissipation
Gain-DC current gain
Frequency160Transition frequency
VCE(sat)10MHzSaturation voltage
Vebo1uAEmitter-Base voltage
Temp100WOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
No compatible alternatives found.
View all TO-3PNT NPN+PNP Transistors ›