PBSS5160T-QR Transistor Datasheet

PNP BJT | Nexperia

PNPTO-236ABGeneral Purpose
VCEO
60V
Ic Max
1A
Pd Max
400mW
Gain
350
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Quick Reference

The PBSS5160T-QR is a PNP bipolar transistor in a TO-236AB package, designed for general purpose applications. It supports a breakdown voltage of 60V and continuous collector current of 1A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerNexperiaOriginal Manufacturer
PackageTO-236ABPhysical mounting form factor
VCEO60VBreakdown voltage
IC Max1ACollector current
Pd Max400mWPower dissipation
Gain350DC current gain
Frequency220MHzTransition frequency
VCE(sat)330mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-65℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
Check datasheet for alternatives.
View all TO-236AB PNP Transistors ›