PBSS8110T-HXY Transistor Datasheet

NPN BJT | HXY MOSFET

NPNSOT-23General Purpose
VCEO
100V
Ic Max
1A
Pd Max
250mW
Gain
300
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Quick Reference

The PBSS8110T-HXY is a NPN bipolar transistor in a SOT-23 package, designed for general purpose applications. It supports a breakdown voltage of 100V and continuous collector current of 1A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-23Physical mounting form factor
VCEO100VBreakdown voltage
IC Max1ACollector current
Pd Max250mWPower dissipation
Gain300DC current gain
Frequency150MHzTransition frequency
VCE(sat)600mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
FMMT415TD NPN SOT-23 100V 500mA 500mW
ZXTN25100DFHTA NPN SOT-23 100V 2.5A 1.25W
MMBTA06-7-F NPN SOT-23 80V 500mA 350mW
NSS1C201LT1G NPN SOT-23 100V 2A 710mW
MMBTA06-TP NPN SOT-23 80V 500mA 300mW
FMMT493TA NPN SOT-23 100V 1A 500mW
FMMT493 NPN SOT-23 100V 1A 500mW
MMBTA06(RANGE:100-400) NPN SOT-23 80V 500mA 300mW
FMMT624TA NPN SOT-23 125V 1A 625mW
View all SOT-23 NPN Transistors ›