PMBTA56-HXY Transistor Datasheet

PNP BJT | HXY MOSFET

PNPSOT-23General Purpose
VCEO
80V
Ic Max
500mA
Pd Max
225mW
Gain
400
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Quick Reference

The PMBTA56-HXY is a PNP bipolar transistor in a SOT-23 package, designed for general purpose applications. It supports a breakdown voltage of 80V and continuous collector current of 500mA. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-23Physical mounting form factor
VCEO80VBreakdown voltage
IC Max500mACollector current
Pd Max225mWPower dissipation
Gain400DC current gain
Frequency50MHzTransition frequency
VCE(sat)250mVSaturation voltage
Vebo4VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MMBT2907A-7-F PNP SOT-23 60V 600mA 350mW
BC856ALT1G PNP SOT-23 65V 100mA 225mW
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
LBC856BLT1G PNP SOT-23 65V 100mA 225mW
MMBT2907A PNP SOT-23 60V 600mA 300mW
MMBT2907A PNP SOT-23 60V 600mA 300mW
FMMT591TA PNP SOT-23 60V 1A 500mW
MMBT2907ALT1HTSA1 PNP SOT-23 60V 600mA 330mW
MMBTA56-7-F PNP SOT-23 80V 500mA 350mW
View all SOT-23 PNP Transistors ›