PZT651T1G Transistor Datasheet

NPN BJT | onsemi

NPNSOT-223General Purpose
VCEO
60V
Ic Max
2A
Pd Max
800mW
Gain
75
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Quick Reference

The PZT651T1G is a NPN bipolar transistor in a SOT-223 package, designed for general purpose applications. It supports a breakdown voltage of 60V and continuous collector current of 2A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-223Physical mounting form factor
VCEO60VBreakdown voltage
IC Max2ACollector current
Pd Max800mWPower dissipation
Gain75DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo75MHzEmitter-Base voltage
Temp-65℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
ZX5T851GTA NPN SOT-223 60V 6A 1.6W
STN851 NPN SOT-223 60V 5A 1.6W
BCP54TA NPN SOT-223 45V 1A 2W
BCP55TA NPN SOT-223 60V 1A 2W
FZT690BTA NPN SOT-223 45V 3A 3W
FZT692BTA NPN SOT-223 70V 2A 3W
BCP54-16 NPN SOT-223 45V 1A 1.5W
2STN1360 NPN SOT-223 60V 3A 1.6W
BCP54 NPN SOT-223 45V 1A 1.33W
TPBCP54-16 NPN SOT-223 45V 1A 1.5W
View all SOT-223 NPN Transistors ›