S-MMBTA42LT1G Transistor Datasheet

NPN BJT | JSMSEMI

NPNSOT-23General Purpose
VCEO
300V
Ic Max
500mA
Pd Max
350mW
Gain
60
📄 View PDF Datasheet🛒 Buy from LCSC

Quick Reference

The S-MMBTA42LT1G is a NPN bipolar transistor in a SOT-23 package, designed for general purpose applications. It supports a breakdown voltage of 300V and continuous collector current of 500mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSMSEMIOriginal Manufacturer
PackageSOT-23Physical mounting form factor
VCEO300VBreakdown voltage
IC Max500mACollector current
Pd Max350mWPower dissipation
Gain60DC current gain
Frequency50MHzTransition frequency
VCE(sat)200mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
DN350T05-7 NPN SOT-23 350V 500mA 300mW
MMBTA42Q-7-F NPN SOT-23 300V 500mA 300mW
MMBTA42 NPN SOT-23 200V 500mA 350mW
SMMBTA42LT1G NPN SOT-23 300V 500mA 225mW
SMMBTA42LT3G NPN SOT-23 300V 500mA 225mW
MMBTA42-7-F NPN SOT-23 300V 500mA 300mW
MMBTA42 NPN SOT-23 200V 500mA 350mW
MMBTA42 NPN SOT-23 200V 500mA 350mW
View all SOT-23 NPN Transistors ›