SBC847AWT1G-HXY Transistor Datasheet

NPN BJT | HXY MOSFET

NPNSOT-323General Purpose
VCEO
45V
Ic Max
100mA
Pd Max
150mW
Gain
450
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Quick Reference

The SBC847AWT1G-HXY is a NPN bipolar transistor in a SOT-323 package, designed for general purpose applications. It supports a breakdown voltage of 45V and continuous collector current of 100mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-323Physical mounting form factor
VCEO45VBreakdown voltage
IC Max100mACollector current
Pd Max150mWPower dissipation
Gain450DC current gain
Frequency100MHzTransition frequency
VCE(sat)-Saturation voltage
Vebo6VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MMST4401-7-F NPN SOT-323 40V 600mA 200mW
MMST3904-7-F NPN SOT-323 40V 200mA 200mW
BC817-40W-7 NPN SOT-323 45V 500mA 200mW
BC847CW-7-F NPN SOT-323 45V 100mA 200mW
MMST2222A-7-F NPN SOT-323 40V 600mA 200mW
MMST3904 NPN SOT-323 40V 200mA 200mW
BC847BW(UMW) NPN SOT-323 45V 100mA 150mW
BC817-25W NPN SOT-323 45V 500mA 200mW
View all SOT-323 NPN Transistors ›