SMBTA06E6327HTSA1-HXY Transistor Datasheet

NPN BJT | HXY MOSFET

NPNSOT-23General Purpose
VCEO
80V
Ic Max
500mA
Pd Max
300mW
Gain
400
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Quick Reference

The SMBTA06E6327HTSA1-HXY is a NPN bipolar transistor in a SOT-23 package, designed for general purpose applications. It supports a breakdown voltage of 80V and continuous collector current of 500mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-23Physical mounting form factor
VCEO80VBreakdown voltage
IC Max500mACollector current
Pd Max300mWPower dissipation
Gain400DC current gain
Frequency100MHzTransition frequency
VCE(sat)250mVSaturation voltage
Vebo4VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MMBTA05(RANGE:100-400) NPN SOT-23 60V 500mA 300mW
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
DNBT8105-7 NPN SOT-23 60V 1A 600mW
FMMT415TD NPN SOT-23 100V 500mA 500mW
FMMT493ATA NPN SOT-23 60V 1A 500mW
BC846AQ-7-F NPN SOT-23 65V 100mA 310mW
FMMT491TA NPN SOT-23 60V 1A 500mW
ZXTN25100DFHTA NPN SOT-23 100V 2.5A 1.25W
MMBTA06-7-F NPN SOT-23 80V 500mA 350mW
MMBTA05LT1G NPN SOT-23 60V 500mA 300mW
View all SOT-23 NPN Transistors ›