SMMBT3906LT1G-HXY Transistor Datasheet

PNP BJT | HXY MOSFET

PNPSOT-23General Purpose
VCEO
40V
Ic Max
200mA
Pd Max
250mW
Gain
300
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Quick Reference

The SMMBT3906LT1G-HXY is a PNP bipolar transistor in a SOT-23 package, designed for general purpose applications. It supports a breakdown voltage of 40V and continuous collector current of 200mA. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-23Physical mounting form factor
VCEO40VBreakdown voltage
IC Max200mACollector current
Pd Max250mWPower dissipation
Gain300DC current gain
Frequency300MHzTransition frequency
VCE(sat)300mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MMBT3906 PNP SOT-23 40V 200mA 300mW
LBSS5240LT1G PNP SOT-23 40V 2A 300mW
ZXTP2025FTA PNP SOT-23 50V 5A 1.2W
2SA812 PNP SOT-23 50V 100mA 200mW
LBC807-40LT1G PNP SOT-23 45V 500mA 225mW
FMMT591ATA PNP SOT-23 40V 1A 500mW
MMBT3906Q-7-F PNP SOT-23 40V 200mA 350mW
MMBT3906 PNP SOT-23 40V 200mA 300mW
DSS5240TQ-7 PNP SOT-23 40V 2A 730mW
BC860C PNP SOT-23 45V 100mA 200mW
View all SOT-23 PNP Transistors ›