SMMBTA06WT1G-HXY Transistor Datasheet

- BJT | HXY MOSFET

-SOT-323General Purpose
VCEO
160V
Ic Max
600nA
Pd Max
-
Gain
300
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Quick Reference

The SMMBTA06WT1G-HXY is a - bipolar transistor in a SOT-323 package, designed for general purpose applications. It supports a breakdown voltage of 160V and continuous collector current of 600nA. This component is widely used in - switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-323Physical mounting form factor
VCEO160VBreakdown voltage
IC Max600nACollector current
Pd Max-Power dissipation
Gain300DC current gain
Frequency300MHzTransition frequency
VCE(sat)200mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
PMST5550-HXY - SOT-323 160V 600mA -
View all SOT-323 - Transistors ›