TIP111G Transistor Datasheet

NPN BJT | onsemi

NPNTO-220General Purpose
VCEO
80V
Ic Max
2A
Pd Max
2W
Gain
1000
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Quick Reference

The TIP111G is a NPN bipolar transistor in a TO-220 package, designed for general purpose applications. It supports a breakdown voltage of 80V and continuous collector current of 2A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-220Physical mounting form factor
VCEO80VBreakdown voltage
IC Max2ACollector current
Pd Max2WPower dissipation
Gain1000DC current gain
Frequency-Transition frequency
VCE(sat)2.5VSaturation voltage
Vebo-Emitter-Base voltage
Temp-65℃~+150℃@(Tj)Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
D44H11G NPN TO-220 80V 10A 70W
TIP41C NPN TO-220-3L 100V 6A 2W
TIP41CG NPN TO-220 100V 6A 65W
D44H11 NPN TO-220C 80V 10A 50W
TIP31A NPN TO-220 60V 3A 40W
TIP41C NPN TO-220-3L 100V 6A 2W
TIP31C NPN TO-220 100V 3A 40W
TIP41C NPN TO-220-3L 100V 6A 2W
TIP102G NPN TO-220 100V 8A 2W
TIP122 NPN TO-220 100V 5A 2W
View all TO-220 NPN Transistors ›