TPLBTN560Y3T1G Transistor Datasheet

NPN BJT | TECH PUBLIC

NPNSOT-89-3General Purpose
VCEO
60V
Ic Max
5.2A
Pd Max
500mW
Gain
520@0.5A,2V
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Quick Reference

The TPLBTN560Y3T1G is a NPN bipolar transistor in a SOT-89-3 package, designed for general purpose applications. It supports a breakdown voltage of 60V and continuous collector current of 5.2A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTECH PUBLICOriginal Manufacturer
PackageSOT-89-3Physical mounting form factor
VCEO60VBreakdown voltage
IC Max5.2ACollector current
Pd Max500mWPower dissipation
Gain520@0.5A,2VDC current gain
Frequency30MHzTransition frequency
VCE(sat)35mV@0.5A,0.05ASaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
PBSS304NX NPN SOT-89-3 60V 5.2A 500mW
TPBT60N5T3 NPN SOT-89-3 60V 5.2A 500mW
TPZXTN19055DZTA NPN SOT-89-3 60V 5.2A 500mW
2SC5566-TP NPN SOT-89-3 60V 5.2A 500mW
2SD1616AG NPN SOT-89-3 60V 1A 500mW
ZXTN2010ZTA-CN NPN SOT-89-3 60V 4.5A 1W
View all SOT-89-3 NPN Transistors ›