UMZ1NFHATR-HXY Transistor Datasheet

NPN+PNP BJT | HXY MOSFET

NPN+PNPSOT-363General Purpose
VCEO
-
Ic Max
50V
Pd Max
-
Gain
-
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Quick Reference

The UMZ1NFHATR-HXY is a NPN+PNP bipolar transistor in a SOT-363 package, designed for general purpose applications. It supports a breakdown voltage of - and continuous collector current of 50V. This component is widely used in NPN+PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-363Physical mounting form factor
VCEO-Breakdown voltage
IC Max50VCollector current
Pd Max-Power dissipation
Gain-DC current gain
Frequency150mWTransition frequency
VCE(sat)560Saturation voltage
Vebo180MHzEmitter-Base voltage
Temp150mAOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
BC846BPN NPN+PNP SOT-363 65V 100mA 200mW
CMKT5078TR-HXY NPN+PNP SOT-363 - 50V -
MMDT4413 NPN+PNP SOT-363 40V 600mA 200mW
View all SOT-363 NPN+PNP Transistors ›