ZXTN25012EZTA Transistor Datasheet

NPN BJT | DIODES

NPNSOT-89High Power
VCEO
12V
Ic Max
6.5A
Pd Max
2.4W
Gain
185
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Quick Reference

The ZXTN25012EZTA is a NPN bipolar transistor in a SOT-89 package, designed for high power applications. It supports a breakdown voltage of 12V and continuous collector current of 6.5A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting form factor
VCEO12VBreakdown voltage
IC Max6.5ACollector current
Pd Max2.4WPower dissipation
Gain185DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo260MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
H2SC3357-RE NPN SOT-89 12V 100mA 1.2W
2SC3357-RF NPN SOT-89 12V 100mA 1.2W
2SC3357-RE NPN SOT-89 12V 100mA 1.2W
2SC3357 RE NPN SOT-89 12V 100mA 1.2W
BFU580Q NPN SOT-89 12V 100mA 1W
BFU580Q NPN SOT-89 12V 100mA 1W
View all SOT-89 NPN Transistors ›