ZXTP2008ZTA Transistor Datasheet

PNP BJT | DIODES

PNPSOT-89High Power
VCEO
30V
Ic Max
5.5A
Pd Max
12W
Gain
70
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Quick Reference

The ZXTP2008ZTA is a PNP bipolar transistor in a SOT-89 package, designed for high power applications. It supports a breakdown voltage of 30V and continuous collector current of 5.5A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting form factor
VCEO30VBreakdown voltage
IC Max5.5ACollector current
Pd Max12WPower dissipation
Gain70DC current gain
Frequency110MHzTransition frequency
VCE(sat)60mVSaturation voltage
Vebo7VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
2DB1132R-13 PNP SOT-89 32V 1A 1.5W
2SB1188-Q-TP PNP SOT-89 32V 2A 500mW
2SAR542PT100 PNP SOT-89 30V 5A 2W
B772-JSM PNP SOT-89 30V 3A 500mW
2DB1188Q-13 PNP SOT-89 32V 2A 1W
2SB772SQ PNP SOT-89 30V 3A 10W
PXT8550 PNP SOT-89 25V 1.5A 500mW
B772 PNP SOT-89 30V 3A 1W
View all SOT-89 PNP Transistors ›