ZXTP2012GTA Transistor Datasheet

PNP BJT | DIODES

PNPSOT-223High Power
VCEO
60V
Ic Max
5.5A
Pd Max
3W
Gain
45
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Quick Reference

The ZXTP2012GTA is a PNP bipolar transistor in a SOT-223 package, designed for high power applications. It supports a breakdown voltage of 60V and continuous collector current of 5.5A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-223Physical mounting form factor
VCEO60VBreakdown voltage
IC Max5.5ACollector current
Pd Max3WPower dissipation
Gain45DC current gain
Frequency120MHzTransition frequency
VCE(sat)195mVSaturation voltage
Vebo7VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
FZT951QTA PNP SOT-223 60V 5A 3W
ZX5T951GTA PNP SOT-223 60V 5.5A 3W
FZT792ATA PNP SOT-223 70V 2A 3W
DPLS350E-13 PNP SOT-223 50V 3A 1W
STN951 PNP SOT-223 60V 5A 1.6W
DZT2907A-13 PNP SOT-223 60V 600mA 1W
DSS60600MZ4-13 PNP SOT-223 60V 6A 2W
ZX5T1951GTA PNP SOT-223 60V 6A 3W
BCP52-10 PNP SOT-223 60V 1A 1.5W
View all SOT-223 PNP Transistors ›