2DA1201Y-7 Transistor Datasheet

PNP BJT | DIODES

PNPSOT-89General Purpose
VCEO
120V
Ic Max
800mA
Pd Max
1.5W
Gain
120

Quick Reference

The 2DA1201Y-7 is a PNP bipolar transistor in a SOT-89 package, designed for general purpose applications. It supports a breakdown voltage of 120V and continuous collector current of 800mA. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting form factor
VCEO120VBreakdown voltage
IC Max800mACollector current
Pd Max1.5WPower dissipation
Gain120DC current gain
Frequency160MHzTransition frequency
VCE(sat)1VSaturation voltage
Vebo7VEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
FCX593TA PNP SOT-89 100V 1A 2W
2SA1201Y PNP SOT-89 120V 800mA 500mW
2SA1416S-TD-E PNP SOT-89 100V 1A 500mW
PXT5401 PNP SOT-89 150V 500mA 500mW
FCX555TA PNP SOT-89 150V 700mA 1.5W
CXT5401 PNP SOT-89-3L 150V 500mA 500mW
2SA1417-S PNP SOT-89 100V 2A 550mW
2SA1661-JSM PNP SOT-89 120V 800mA 500mW
2SA1201-JSM PNP SOT-89 120V 800mA 500mW
2SB806 PNP SOT-89 120V 700mA 2W
View all SOT-89 PNP Transistors โ€บ