2SB806 Transistor Datasheet

PNP BJT | Shikues

PNPSOT-89General Purpose
VCEO
120V
Ic Max
700mA
Pd Max
2W
Gain
45
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Quick Reference

The 2SB806 is a PNP bipolar transistor in a SOT-89 package, designed for general purpose applications. It supports a breakdown voltage of 120V and continuous collector current of 700mA. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerShikuesOriginal Manufacturer
PackageSOT-89Physical mounting form factor
VCEO120VBreakdown voltage
IC Max700mACollector current
Pd Max2WPower dissipation
Gain45DC current gain
Frequency75MHzTransition frequency
VCE(sat)400mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
2DA1201Y-7 PNP SOT-89 120V 800mA 1.5W
FCX593TA PNP SOT-89 100V 1A 2W
2SA1201Y PNP SOT-89 120V 800mA 500mW
2SA1416S-TD-E PNP SOT-89 100V 1A 500mW
PXT5401 PNP SOT-89 150V 500mA 500mW
FCX555TA PNP SOT-89 150V 700mA 1.5W
CXT5401 PNP SOT-89-3L 150V 500mA 500mW
2SA1417-S PNP SOT-89 100V 2A 550mW
2SA1661-JSM PNP SOT-89 120V 800mA 500mW
2SA1201-JSM PNP SOT-89 120V 800mA 500mW
View all SOT-89 PNP Transistors ›