2SA1386 Transistor Datasheet

PNP BJT | SPTECH

PNPTO-3PNHigh Power
VCEO
160V
Ic Max
15A
Pd Max
130W
Gain
180
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Quick Reference

The 2SA1386 is a PNP bipolar transistor in a TO-3PN package, designed for high power applications. It supports a breakdown voltage of 160V and continuous collector current of 15A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3PNPhysical mounting form factor
VCEO160VBreakdown voltage
IC Max15ACollector current
Pd Max130WPower dissipation
Gain180DC current gain
Frequency40MHzTransition frequency
VCE(sat)2VSaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
2SA2151 PNP TO-3PN 200V 15A 160W
2SB688 PNP TO-3PN 120V 8A 80W
2SB817 PNP TO-3PN 140V 12A 100W
2SA1106 PNP TO-3PN 140V 10A 100W
2SA1141 PNP TO-3PN 115V 10A 100W
2SA1186 PNP TO-3PN 150V 10A 100W
2SA1232 PNP TO-3PN 130V 10A 100W
2SA1492 PNP TO-3PN 180V 15A 130W
2SA1941 PNP TO-3PN 140V 10A 100W
View all TO-3PN PNP Transistors ›