2SB817 Transistor Datasheet

PNP BJT | SPTECH

PNPTO-3PNHigh Power
VCEO
140V
Ic Max
12A
Pd Max
100W
Gain
200
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Quick Reference

The 2SB817 is a PNP bipolar transistor in a TO-3PN package, designed for high power applications. It supports a breakdown voltage of 140V and continuous collector current of 12A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3PNPhysical mounting form factor
VCEO140VBreakdown voltage
IC Max12ACollector current
Pd Max100WPower dissipation
Gain200DC current gain
Frequency15MHzTransition frequency
VCE(sat)2.5VSaturation voltage
Vebo6VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
2SA1386 PNP TO-3PN 160V 15A 130W
2SB688 PNP TO-3PN 120V 8A 80W
2SA1106 PNP TO-3PN 140V 10A 100W
2SA1141 PNP TO-3PN 115V 10A 100W
2SA1186 PNP TO-3PN 150V 10A 100W
2SA1232 PNP TO-3PN 130V 10A 100W
TIP36C PNP TO-247 100V 25A 125W
2SA1492 PNP TO-3PN 180V 15A 130W
2SA1941 PNP TO-3PN 140V 10A 100W
View all TO-3PN PNP Transistors ›