2SC5566-TD-E Transistor Datasheet

NPN BJT | onsemi

NPNSOT-89High Power
VCEO
50V
Ic Max
4A
Pd Max
3.5W
Gain
200
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Quick Reference

The 2SC5566-TD-E is a NPN bipolar transistor in a SOT-89 package, designed for high power applications. It supports a breakdown voltage of 50V and continuous collector current of 4A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-89Physical mounting form factor
VCEO50VBreakdown voltage
IC Max4ACollector current
Pd Max3.5WPower dissipation
Gain200DC current gain
Frequency400MHzTransition frequency
VCE(sat)105mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
ZXTN2010ZTA NPN SOT-89 60V 5A 2.1W
ZXTN19055DZTA NPN SOT-89 55V 6A 2.1W
FCX690BTA NPN SOT-89 45V 2A 2W
2SC5824T100R NPN SOT-89 60V 3A 2W
2STF1360 NPN SOT-89 60V 3A 1.4W
DXT3904-13 NPN SOT-89 40V 200mA 1.2W
DXT2222A-13 NPN SOT-89 40V 600mA 1.2W
FCX491ATA NPN SOT-89 40V 1A 1W
BCX55-16 NPN SOT-89 60V 1A 1.3W
View all SOT-89 NPN Transistors ›