ZXTN2010ZTA Transistor Datasheet

NPN BJT | DIODES

NPNSOT-89High Power
VCEO
60V
Ic Max
5A
Pd Max
2.1W
Gain
55
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Quick Reference

The ZXTN2010ZTA is a NPN bipolar transistor in a SOT-89 package, designed for high power applications. It supports a breakdown voltage of 60V and continuous collector current of 5A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting form factor
VCEO60VBreakdown voltage
IC Max5ACollector current
Pd Max2.1WPower dissipation
Gain55DC current gain
Frequency130MHzTransition frequency
VCE(sat)65mVSaturation voltage
Vebo7VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
ZXTN19055DZTA NPN SOT-89 55V 6A 2.1W
FCX690BTA NPN SOT-89 45V 2A 2W
2SC5824T100R NPN SOT-89 60V 3A 2W
2STF1360 NPN SOT-89 60V 3A 1.4W
2SC5566-TD-E NPN SOT-89 50V 4A 3.5W
BCX55-16 NPN SOT-89 60V 1A 1.3W
2SCR553PT100 NPN SOT-89 50V 2A 2W
CXT3904TR-HXY NPN SOT-89 50V 200mA 500mW
2SC2873 NPN SOT-89 50V 2A 500mW
View all SOT-89 NPN Transistors ›