2SC5707-TL-E Transistor Datasheet

NPN BJT | onsemi

NPNTO-252High Power
VCEO
-
Ic Max
50V
Pd Max
8A
Gain
-
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Quick Reference

The 2SC5707-TL-E is a NPN bipolar transistor in a TO-252 package, designed for high power applications. It supports a breakdown voltage of - and continuous collector current of 50V. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252Physical mounting form factor
VCEO-Breakdown voltage
IC Max50VCollector current
Pd Max8APower dissipation
Gain-DC current gain
Frequency200Transition frequency
VCE(sat)330MHzSaturation voltage
Vebo100nAEmitter-Base voltage
Temp1WOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
2SD882 NPN TO-126 30V 3A 12.5W
2SD1815S-TL-E NPN TO-252 - 100V 3A
D882M NPN TO-252-2L 30V 3A 1.25W
View all TO-252 NPN Transistors ›