D882M Transistor Datasheet

NPN BJT | HT(Shenzhen Jinyu Semicon)

NPNTO-252High Power
VCEO
-
Ic Max
30V
Pd Max
3A
Gain
-55℃~+150℃
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Quick Reference

The D882M is a NPN bipolar transistor in a TO-252 package, designed for high power applications. It supports a breakdown voltage of - and continuous collector current of 30V. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHT(Shenzhen Jinyu Semicon)Original Manufacturer
PackageTO-252Physical mounting form factor
VCEO-Breakdown voltage
IC Max30VCollector current
Pd Max3APower dissipation
Gain-55℃~+150℃DC current gain
Frequency-Transition frequency
VCE(sat)90MHzSaturation voltage
Vebo-Emitter-Base voltage
Temp1.25WOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
2SD882 NPN TO-126 30V 3A 12.5W
2SD1815S-TL-E NPN TO-252 - 100V 3A
2SC5707-TL-E NPN TO-252 - 50V 8A
View all TO-252 NPN Transistors ›