2SD1007Q Transistor Datasheet

NPN BJT | Shikues

NPNSOT-89General Purpose
VCEO
120V
Ic Max
700mA
Pd Max
2W
Gain
200
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Quick Reference

The 2SD1007Q is a NPN bipolar transistor in a SOT-89 package, designed for general purpose applications. It supports a breakdown voltage of 120V and continuous collector current of 700mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerShikuesOriginal Manufacturer
PackageSOT-89Physical mounting form factor
VCEO120VBreakdown voltage
IC Max700mACollector current
Pd Max2WPower dissipation
Gain200DC current gain
Frequency90MHzTransition frequency
VCE(sat)300mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
ZXTN2011ZTA NPN SOT-89 100V 4.5A 2.1W
ZXTN4004ZTA NPN SOT-89 150V 1A 2W
2SC554SQ NPN SOT-89 100V 2A 500mW
2SC4373-Y NPN SOT-89 120V 800mA 500mW
FCX605TA NPN SOT-89 120V 1A 1W
SL493TA NPN SOT-89 100V 1mA 1W
FCX493TA NPN SOT-89 100V 1A 1W
FCX493QTA NPN SOT-89 100V 1A 1W
BCX56-16-AU_R1_000A1 NPN SOT-89 100V 1A 1.4W
FCX495TA NPN SOT-89 150V 1A 1W
View all SOT-89 NPN Transistors ›